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| BSR 15, BSR 16 PNP Switching Transistors PNP Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren fur die Oberflachenmontage Power dissipation - Verlustleistung 2.9 0.1 0.4 3 250 mW SOT-23 (TO-236) 0.01 g 1.1 Plastic case Kunststoffgehause 1.3 0.1 Type Code 1 2 2.5 max Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 1.9 Dimensions / Mae in mm 1=B 2=E 3=C Maximum ratings (TA = 25/C) Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) Peak Collector current - Kollektor-Spitzenstrom Peak Base current - Basis-Spitzenstrom Junction temp. - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open - VCE0 - VCB0 - VEB0 Ptot - IC - ICM - IBM Tj TS Grenzwerte (TA = 25/C) BSR 15 40 V 60 V 5V 250 mW 1) 600 mA 800 mA 200 mA 150/C - 65...+ 150/C BSR 16 60 V Characteristics (Tj = 25/C) Min. Collector-Base cutoff current - Kollektorreststrom IE = 0, - VCB = 50 V IE = 0, - VCB = 50 V, Tj = 150/C IE = 0, - VCB = 60 V IE = 0, - VCB = 60 V, Tj = 150/C IC = 0, - VEB = 5 V BSR 15 BSR 16 - ICB0 - ICB0 - ICB0 - ICB0 - IEB0 - - - - - Kennwerte (Tj = 25/C) Typ. - - - - - Max. 20 nA 20 :A 10 nA 10 :A 50 nA Emitter-Base cutoff current - Emitterreststrom 1 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 8 Switching Transistors Characteristics (Tj = 25/C) Min. DC current gain - Kollektor-Basis-Stromverhaltnis 1) - VCE = 10 V, - IC = 0.1 mA - VCE = 10 V, - IC = 1 mA - VCE = 10 V, - IC = 10 mA - VCE = 10 V, - IC = 500 mA - VCE = 10 V, - IC = 150 mA - IC = 150 mA, - IB = 15 mA - IC = 500 mA, - IB = 50 mA - IC = 150 mA, - IB = 15 mA - IC = 500 mA, - IB = 50 mA Gain-Bandwidth Product - Transitfrequenz - VCE = 20 V, - IC = 20 mA, f = 100 MHz - VCB = 10 V, IE = ie = 0, f = 1 MHz - VEB = 2 V, IC = ic = 0, f = 1 MHz Switching times - Schaltzeiten turn-on time delay time rise time turn-off time storage time fall time Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren Marking - Stempelung 1 2 BSR 15, BSR 16 Kennwerte (Tj = 25/C) Typ. - - - - - - - - - - - - - - 8 pF 30 pF - - - - - - Max. - - - - - - - - 300 400 mV 1.6 V 1.3 V 2.6 V - - - 40 ns 12 ns 30 ns 365 ns 300 ns 65 ns 420 K/W 2) BSR 13, BSR 14 BSR 15 = T7 BSR 16 = T8 BSR 15 BSR 16 BSR 15 BSR 16 BSR 15 BSR 16 BSR 15 BSR 16 hFE hFE hFE hFE hFE hFE hFE hFE hFE - VCEsat - VCEsat - VBEsat - VBEsat fT CCB0 CEB0 ton 35 75 50 100 75 100 30 50 100 - - - - 200 MHz - - - - - - - - RthA Collector saturation volt. - Kollektor-Sattigungsspg. 1) Base saturation voltage - Basis-Sattigungsspannung 1) Collector-Base Capacitance - Kollektor-Basis-Kapazitat Emitter-Base Capacitance - Emitter-Basis-Kapazitat ICon = 150 mA IBon = 15 mA - IBoff = 15 mA td tr toff ts tf ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 9 |
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